RADIATION-INDUCED DEFECT STATES IN LOW TO MODERATELY BORON-DOPED SILICON

被引：6

作者：

AWADELKARIM, OO ^{[1
]}

MONEMAR, B ^{[1
]}

机构：

[1] LINKOPING INST TECHNOL,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 11期

关键词：

D O I：

10.1063/1.342089

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6301 / 6305

页数：5

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