DETECTION OF MINORITY-CARRIER TRAPS USING TRANSIENT SPECTROSCOPY

被引：75

作者：

BRUNWIN, R

HAMILTON, B

JORDAN, P

PEAKER, AR

机构：

[1] University of Manchester Institute of Science & Technology

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 12期

关键词：

Deep-level transient spectroscopy; Gallium phosphide; Minority carriers; Schottky barriers;

D O I：

10.1049/el:19790248

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A technique for measuring the properties of deep states which trap minority carriers in the depletion region of a Schottky barrier is described. By combining minority-carrier capture and d.l.t.s. the method enables states to be separated according to their capture cross-sections as well as their emission properties. Results on GaP are described. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：349 / 350

页数：2

共 5 条

[1] DEEP-LEVEL CONTROLLED LIFETIME AND LUMINESCENCE EFFICIENCY IN GAP
HAMILTON, B
PEAKER, AR
BRAMWELL, S
HARDING, W
WIGHT, DR
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (12) : 702 - 704
[2] HAMILTON B, 1979, J APPL PHYS, V50
[3] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[4] MITONNEAU A, 1977, 33 I PHYS C SER ED A, P73
[5] DEEP-LEVEL CAPACITANCE SPECTROSCOPY OF NITROGEN-DOPED VPE GAP
TELL, B
KUIJPERS, FPJ
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 5938 - 5943

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