DEEP-LEVEL CAPACITANCE SPECTROSCOPY OF NITROGEN-DOPED VPE GAP

被引：39

作者：

TELL, B ^{[1
]}

KUIJPERS, FPJ ^{[1
]}

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 12期

关键词：

D O I：

10.1063/1.324561

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5938 / 5943

页数：6

共 25 条

[1] MEASUREMENT OF EXTRINSIC ROOM-TEMPERATURE MINORITY CARRIER LIFETIME IN GAP [J].

BACHRACH, RZ ;

LORIMOR, OG .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :500-&

[2]

BLENKINSOP ID, 1977, ELECTRON LETT, V13, P14, DOI 10.1049/el:19770011

[3] NICKEL, A PERSISTENT INADVERTENT CONTAMINANT IN DEVICE-GRADE VAPOR EPITAXIALLY GROWN GALLIUM-PHOSPHIDE [J].

DEAN, PJ ;

WHITE, AM ;

HAMILTON, B ;

PEAKER, AR ;

GIBB, RM .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (18) :2545-2554

[4] DEEP-LEVEL CONTROLLED LIFETIME AND LUMINESCENCE EFFICIENCY IN GAP [J].

HAMILTON, B ;

PEAKER, AR ;

BRAMWELL, S ;

HARDING, W ;

WIGHT, DR .

APPLIED PHYSICS LETTERS, 1975, 26 (12) :702-704

[5]

HAMILTON B, UNPUBLISHED

[6]

KUIJPERS FPJ, 1975, J CRYST GROWTH, V31, P165

[7]

KUIJPERS FPJ, 1976, 1ST EUR C CRYST GROW

[8]

LANG DJ, UNPUBLISHED

[9] DEEP-LEVEL DISTRIBUTIONS NEAR P-N-JUNCTIONS IN LPE GAAS [J].

LANG, DV ;

LOGAN, RA .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1533-1537

[10] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

← 1 2 3 →