DEEP-LEVEL CAPACITANCE SPECTROSCOPY OF NITROGEN-DOPED VPE GAP

被引:39
作者
TELL, B [1 ]
KUIJPERS, FPJ [1 ]
机构
[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
关键词
D O I
10.1063/1.324561
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:5938 / 5943
页数:6
相关论文
共 25 条
[11]   OBSERVATIONS ON SI CONTAMINATION IN GAP LPE [J].
LORIMOR, OG ;
HASZKO, SE ;
DAPKUS, PD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) :1230-1233
[13]   CAPACITANCE TRANSIENT SPECTROSCOPY [J].
MILLER, GL ;
LANG, DV ;
KIMERLING, LC .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :377-448
[14]   STUDY OF ELECTRON TRAPS IN VAPOR-PHASE EPITAXIAL GAAS [J].
MIRCEA, A ;
MITONNEAU, A .
APPLIED PHYSICS, 1975, 8 (01) :15-21
[15]   NEAR-JUNCTION CONCENTRATION OF OXYGEN DONOR AND ITS CORRELATION WITH EFFICIENCY FOR GAP RED-EMITTING DIODES [J].
MIZUTA, M ;
KUKIMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (10) :1631-1632
[16]  
PEAKER AR, 1976, GAAS RELATED COMPOUN, P326
[17]   STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].
SHOCKLEY, W ;
READ, WT .
PHYSICAL REVIEW, 1952, 87 (05) :835-842
[18]   DEEP CENTER ASSOCIATED WITH PRESENCE OF NITROGEN IN GAP [J].
SMITH, BL ;
HAYES, TJ ;
PEAKER, AR ;
WIGHT, DR .
APPLIED PHYSICS LETTERS, 1975, 26 (03) :122-124
[19]   EFFECT OF 3/5 RATIO ON PROPERTIES OF VAPOR-PHASE EPITAXIAL GAP [J].
STRINGFELLOW, GB ;
HALL, HT .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (06) :916-920
[20]   CAPACITANCE SPECTROSCOPY OF DEGRADED GAASP LIGHT-EMITTING-DIODES [J].
TELL, B ;
VANOPDORP, C .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) :2973-2977