EFFECT OF 3/5 RATIO ON PROPERTIES OF VAPOR-PHASE EPITAXIAL GAP

被引:17
作者
STRINGFELLOW, GB [1 ]
HALL, HT [1 ]
机构
[1] HEWLETT PACKARD CO,PALO ALTO,CA 94304
关键词
D O I
10.1149/1.2132967
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:916 / 920
页数:5
相关论文
共 40 条
[1]  
Ashen D. J., 1975, Gallium Arsenide and Related Compounds, 1974, P229
[2]   EVIDENCE FOR A PRIMARILY NONRADIATIVE SIO DEFECT IN GAP [J].
BACHRACH, RZ ;
LORIMOR, OG ;
DAWSON, LR ;
WOLFSTIRN, KB .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :5098-5101
[3]  
BHARGAVA RN, 1971, PHILIPS TECH REV, V32, P261
[4]   ELECTROLUMINESCENCE AND ELECTRICAL PROPERTIES OF HIGH-PURITY VAPOR-GROWN GAP [J].
CRAFORD, MG ;
GROVES, WO ;
HERZOG, AH ;
HILL, DE .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) :2751-+
[5]   PHOTOLUMINESCENCE STUDY OF DEFECTS IN NONSTOICHIOMETRIC GALLIUM-ARSENIDE USING CONCURRENT ELECTRICAL AND STRUCTURAL CHARACTERIZATION [J].
DRISCOLL, CM ;
WILLOUGHBY, AF ;
WILLIAMS, EW .
JOURNAL OF MATERIALS SCIENCE, 1974, 9 (10) :1615-1623
[6]   INFLUENCE OF GAS-PHASE STOICHIOMETRY ON DEFECT MORPHOLOGY, IMPURITY DOPING, AND ELECTROLUMINESCENCE EFFICIENCY OF VAPOR-GROWN GAAS P-N-JUNCTIONS [J].
ENSTROM, RE ;
NUESE, CJ ;
APPERT, JR ;
GANNON, JJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (11) :1516-1523
[7]   THERMALLY STIMULATED CURRENT MEASUREMENTS IN N-TYPE LEC GAP [J].
FABRE, E ;
BHARGAVA, RN ;
ZWICKER, WK .
JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (02) :409-430
[8]   THERMALLY STIMULATED CURRENT MEASUREMENTS AND THEIR CORRELATION WITH EFFICIENCY AND DEGRADATION IN GAP LEDS [J].
FABRE, E ;
BHARGAVA, RN .
APPLIED PHYSICS LETTERS, 1974, 24 (07) :322-324
[9]   DEEP-LEVEL CONTROLLED LIFETIME AND LUMINESCENCE EFFICIENCY IN GAP [J].
HAMILTON, B ;
PEAKER, AR ;
BRAMWELL, S ;
HARDING, W ;
WIGHT, DR .
APPLIED PHYSICS LETTERS, 1975, 26 (12) :702-704
[10]   NUCLEAR-MAGNETIC-RESONANCE DETECTION OF CHARGE DEFECTS IN GALLIUM-ARSENIDE [J].
HESTER, RK ;
SHER, A ;
SOEST, JF ;
WEISZ, G .
PHYSICAL REVIEW B, 1974, 10 (10) :4262-4273