CAPACITANCE SPECTROSCOPY OF DEGRADED GAASP LIGHT-EMITTING-DIODES

被引：12

作者：

TELL, B ^{[1
]}

VANOPDORP, C ^{[1
]}

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 05期

关键词：

D O I：

10.1063/1.325140

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2973 / 2977

页数：5

共 14 条

[1] MEASUREMENT OF EXTRINSIC ROOM-TEMPERATURE MINORITY CARRIER LIFETIME IN GAP [J].

BACHRACH, RZ ;

LORIMOR, OG .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :500-&

[2] DEEP-LEVEL CHANGES ASSOCIATED WITH DEGRADATION OF GALLIUM-PHOSPHIDE RED-LIGHT-EMITTING DIODES [J].

HENRY, CH ;

DAPKUS, PD .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) :4067-4072

[3] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[4] CAPACITANCE SPECTROSCOPY STUDIES OF DEGRADED ALXGA1-XAS DH STRIPE-GEOMETRY LASERS [J].

LANG, DV ;

HARTMAN, RL ;

SCHUMAKER, NE .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) :4986-4992

[5] ENHANCED DEGRADATION AND DEEP-LEVEL FORMATION AT DISLOCATIONS IN GAAS0.6P0.4LEDS [J].

METZ, S .

APPLIED PHYSICS LETTERS, 1977, 30 (06) :296-297

[6] STUDY OF ELECTRON TRAPS IN VAPOR-PHASE EPITAXIAL GAAS [J].

MIRCEA, A ;

MITONNEAU, A .

APPLIED PHYSICS, 1975, 8 (01) :15-21

[7]

NUESE CJ, COMMUNICATION

[8] NEW SPECTROSCOPIC TECHNIQUE FOR IMAGING SPATIAL-DISTRIBUTION OF NONRADIATIVE DEFECTS IN A SCANNING-TRANSMISSION ELECTRON-MICROSCOPE [J].

PETROFF, PM ;

LANG, DV .

APPLIED PHYSICS LETTERS, 1977, 31 (02) :60-62

[9] DEFECT CENTERS IN GAAS1-XPX ELECTROLUMINESCENT DIODES DUE TO HIGH-ENERGY ELECTRON IRRADIATION [J].

SCHADE, H ;

NUESE, CJ ;

HERRICK, D .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3783-&

[10] DIRECT EVIDENCE FOR GENERATION OF DEFECT CENTERS DURING FORWARD-BIAS DEGRADATION OF GAAS1-XPXELECTROLUMINESCENT DIODES [J].

SCHADE, H ;

NUESE, CJ ;

GANNON, JJ .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :5072-&

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