DEFECT CENTERS IN GAAS1-XPX ELECTROLUMINESCENT DIODES DUE TO HIGH-ENERGY ELECTRON IRRADIATION

被引：15

作者：

SCHADE, H

NUESE, CJ

HERRICK, D

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 09期

关键词：

D O I：

10.1063/1.1659507

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3783 / &

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