DIRECT EVIDENCE FOR GENERATION OF DEFECT CENTERS DURING FORWARD-BIAS DEGRADATION OF GAAS1-XPXELECTROLUMINESCENT DIODES

被引：23

作者：

SCHADE, H

NUESE, CJ

GANNON, JJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 12期

关键词：

D O I：

10.1063/1.1659894

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5072 / &

共 19 条

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