OBSERVATIONS ON SI CONTAMINATION IN GAP LPE

被引：8

作者：

LORIMOR, OG ^{[1
]}

HASZKO, SE ^{[1
]}

DAPKUS, PD ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 09期

关键词：

D O I：

10.1149/1.2134431

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1230 / 1233

页数：4

共 18 条

[1] EVIDENCE FOR A PRIMARILY NONRADIATIVE SIO DEFECT IN GAP [J].

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LORIMOR, OG ;

DAWSON, LR ;

WOLFSTIRN, KB .

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[2] MEASUREMENT OF EXTRINSIC ROOM-TEMPERATURE MINORITY CARRIER LIFETIME IN GAP [J].

BACHRACH, RZ ;

LORIMOR, OG .

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[3] MINORITY-CARRIER LIFETIMES AND LUMINESCENCE EFFICIENCIES IN NITROGEN-DOPED GAP [J].

DAPKUS, PD ;

HACKETT, WH ;

LORIMOR, OG ;

KAMMLOTT, GW ;

HASZKO, SE .

APPLIED PHYSICS LETTERS, 1973, 22 (05) :227-229

[4] OPTICAL PROPERTIES OF GROUP 4 ELEMENTS CARBON AND SILICON IN GALLIUM PHOSPHIDE [J].

DEAN, PJ ;

FROSCH, CJ ;

HENRY, CH .

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[5]

GREENE PD, 1973, J PHYS D, V6, P1552

[6] CALCULATION OF LIQUIDUS ISOTHERMS AND COMPONENT ACTIVITIES IN GA-AS-SI AND GA-P-SI TERNARY-SYSTEMS [J].

JORDAN, AS ;

WEINER, ME .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) :1634-1641

[7] VERY HIGH-EFFICIENCY GAP GREEN LIGHT EMITTING DIODES [J].

LORIMOR, OG ;

DAPKUS, PD ;

HACKETT, WH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) :407-412

[8] HIGH-CAPACITY LIQUID-PHASE EPITAXY APPARATUS UTILIZING THIN MELTS [J].

LORIMOR, OG ;

SAUL, RH ;

DAWSON, LR ;

PAOLA, CR .

SOLID-STATE ELECTRONICS, 1973, 16 (11) :1289-&

[9] P-TYPE DOPANTS FOR GAP GREEN LIGHT EMITTING DIODES [J].

LORIMOR, OG ;

WEINER, ME .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (11) :1576-&

[10]

LORIMOR OG, 1971, OCT EL SOC M CLEV

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