MEASUREMENT OF SCHOTTKY-BARRIER ENERGY ON INGAP AND INGAALP FILMS LATTICE MATCHED TO GAAS

被引：11

作者：

NANDA, A ^{[1
]}

HAFICH, MJ ^{[1
]}

VOGT, TJ ^{[1
]}

WOODS, LM ^{[1
]}

PATRIZI, GA ^{[1
]}

ROBINSON, GY ^{[1
]}

机构：

[1] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 01期

关键词：

D O I：

10.1063/1.107621

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Schottky barrier energies for both n-type and p-type materials have been measured for the wide band-gap alloys InGaP and InGaAlP when lattice matched to GaAs. A gold metallization was used and the barrier energy was measured on chemically etched surfaces using conventional current-voltage and photoemission techniques. In the range of alloy composition investigated, the sum of the n-type and p-type barriers was found not to equal the value of the energy gap determined from optical measurements. For InxGa1-x-yAlyP lattice matched to GaAs, the n-type Schottky barrier energy was found to decrease, while the p-type barrier increased, with increasing Al content y.

引用

页码：81 / 83

页数：3

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