ANGLED ETCHING OF GAAS/ALGAAS BY CONVENTIONAL CL-2 REACTIVE ION ETCHING

被引：26

作者：

TAKAMORI, T

COLDREN, LA

MERZ, JL

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 25期

关键词：

D O I：

10.1063/1.100204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2549 / 2551

页数：3

共 8 条

[1] DIRECTIONAL REACTIVE-ION-ETCHING OF INP WITH CL-2 CONTAINING GASES [J].

COLDREN, LA ;

RENTSCHLER, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (02) :225-230

[2] MONOLITHIC TWO-DIMENSIONAL SURFACE-EMITTING ARRAYS OF GAAS/ALGAAS DIODE-LASERS [J].

DONNELLY, JP ;

GOODHUE, WD ;

WINDHORN, TH ;

BAILEY, RJ ;

LAMBERT, SA .

APPLIED PHYSICS LETTERS, 1987, 51 (15) :1138-1140

[3] ION-BEAM ETCHING [J].

GLOERSEN, PG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :28-35

[4] OXYGEN ION-BEAM ETCHING FOR PATTERN TRANSFER [J].

GOKAN, H ;

ITOH, M ;

ESHO, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01) :34-37

[5]

GOODHUE WD, 1987, I PHYS C SER, V83, P349

[6] MICROFABRICATION BY ION-BEAM ETCHING [J].

LEE, RE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :164-170

[7] LOW-THRESHOLD INGAASP/INP 1.3-MUM DOUBLY BURIED-HETEROSTRUCTURE LASERS WITH A REACTIVE-ION-ETCHED FACET [J].

SAITO, H ;

NOGUCHI, Y ;

NAGAI, H .

ELECTRONICS LETTERS, 1986, 22 (01) :36-38

[8] NONSELECTIVE ETCHING OF GAAS ALGAAS DOUBLE HETEROSTRUCTURE LASER FACETS BY CL-2 REACTIVE ION ETCHING IN A LOAD-LOCKED SYSTEM [J].

VAWTER, GA ;

COLDREN, LA ;

MERZ, JL ;

HU, EL .

APPLIED PHYSICS LETTERS, 1987, 51 (10) :719-721

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