ON CHARGE INJECTION IN ANALOG MOS SWITCHES AND DUMMY SWITCH COMPENSATION TECHNIQUES

被引：65

作者：

EICHENBERGER, C

GUGGENBUHL, W

机构：

[1] Electronics Laboratory, Swiss Federal Institute of Technology Zurich, ETH Zurich Zentrum

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS | 1990年 / 37卷 / 02期

关键词：

D O I：

10.1109/31.45719

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Theoretical and experimental results of the clock feed through phenomenon (charge injection) in sample-and-hold circuits using minimum feature size transistors of a self-aligned 3-μm CMOS technology are compared. The lumped RC-model of the conductive channel has been used and verified in different switch configurations including variable input voltages. Special emphasis is laid on the feasibility and limits of charge cancellation techniques using dummy switch designs. © 1990 IEEE

引用

页码：256 / 264

页数：9

共 15 条

[1] CHARGE PUMPING IN MOS DEVICES [J].