ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF INASBI AND INASSBBI

被引：64

作者：

MA, KY ^{[1
]}

FANG, ZM ^{[1
]}

JAW, DH ^{[1
]}

COHEN, RM ^{[1
]}

STRINGFELLOW, GB ^{[1
]}

KOSAR, WP ^{[1
]}

BROWN, DW ^{[1
]}

机构：

[1] ADV TECHNOL MAT INC,NEW MILFORD,CT 06776

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 23期

关键词：

D O I：

10.1063/1.102033

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2420 / 2422

页数：3

共 26 条

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PARIKH, NR .

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[5]

ISLAMOV SA, 1984, ZH NEORG KHIM+, V29, P1355

[6] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF THE METASTABLE ALLOY INP1-XSBX [J].

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CHERNG, YT ;

STRINGFELLOW, GB .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) :1472-1475

[7] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF A NEW SEMICONDUCTOR ALLOY - GAP1-XSBX [J].

JOU, MJ ;

CHERNG, YT ;

JEN, HR ;

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1988, 52 (07) :549-551

[8] GROWTH OF INSB1-XBIX SINGLE-CRYSTALS BY CZOCHRALSKI METHOD [J].

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[9] HIGH PHOTOCONDUCTIVE GAIN IN LATERAL INASSB STRAINED-LAYER SUPERLATTICE INFRARED DETECTORS [J].

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APPLIED PHYSICS LETTERS, 1988, 53 (20) :1961-1963

[10] DEMONSTRATION OF AN INASSB STRAINED-LAYER SUPERLATTICE PHOTODIODE [J].

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APPLIED PHYSICS LETTERS, 1988, 52 (19) :1581-1583

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