TIME-DELAYED LASER OSCILLATION OF A DH DIODE HAVING AN UNPUMPED REGION

被引：3

作者：

IWAMOTO, K ^{[1
]}

HINO, I ^{[1
]}

机构：

[1] NIPPON ELECTR CO LTD,CENT RES LAB,KAWASAKI,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 04期

关键词：

D O I：

10.1063/1.323820

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1742 / 1744

页数：3

共 10 条

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[2] CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV
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[3] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643
[4] GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS
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[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1299 - 1306
[5] ROOM-TEMPERATURE CW OPERATED SUPER-LUMINESCENT DIODES FOR OPTICAL-PUMPING OF ND - YAG LASER
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (11) : 2191 - 2194
[6] LEE TP, 1973, IEEE J QUANTUM ELECT, VQE 9, P820, DOI 10.1109/JQE.1973.1077738
[7] DELAYS AND Q-SWITCHING IN SEMICONDUCTOR LASERS - STILL AN OPEN QUESTION
RIPPER, JE
ROSSI, JA
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1974, QE10 (04) : 435 - 441
[8] THRESHOLD REQUIREMENTS AND CARRIER INTERACTION EFFECTS IN GAAS PLATELET LASERS (77 DEGREES K)
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BURNHAM, RD
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) : 312 - +
[9] CALCULATED SPECTRAL DEPENDENCE OF GAIN IN EXCITED GAAS
STERN, F
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5382 - 5386
[10] THEORY OF BAND STRUCTURE OF VERY DEGENERATE SEMICONDUCTORS
WOLFF, PA
[J]. PHYSICAL REVIEW, 1962, 126 (02): : 405 - &

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