A 500-MHZ 16X16 COMPLEX MULTIPLIER USING SELF-ALIGNED GATE GAAS HETEROSTRUCTURE FET TECHNOLOGY

被引：5

作者：

AKINWANDE, AI

MACTAGGART, IR

BETZ, BK

GRIDER, DE

LANGE, TH

NOHAVA, JC

TETZLAFF, DE

ARCH, DK

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1989年 / 24卷 / 05期

关键词：

D O I：

10.1109/JSSC.1989.572600

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1295 / 1300

页数：6

共 14 条

[1] MODULATION-DOPED FET THRESHOLD VOLTAGE UNIFORMITY OF A HIGH THROUGHPUT 3 INCH MBE SYSTEM [J].

ABROKWAH, JK ;

CIRILLO, NC ;

HELIX, MJ ;

LONGERBONE, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :252-255

[2]

AKINWANDE AI, 1989 ISSCC, V32, P232

[3]

CIRILLO NC, 1984, OCT P GAAS INT CIRC, P167

[4]

GEORGE JD, 1989 ISSCC, V32, P184

[5]

ISHIBASHI T, IEDM, P826

[6]

ISHIKAWA T, 1981, JAPAN J APPL PHYS, V20

[7] A 40-PS HIGH ELECTRON-MOBILITY TRANSISTOR 4.1-K GATE ARRAY [J].

KAJII, K ;

WATANABE, Y ;

SUZUKI, M ;

HANYU, I ;

KOSUGI, M ;

ODANI, K ;

MIMURA, T ;

ABE, M .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1988, 23 (02) :485-489

[8] A FULLY OPERATIONAL 1-KBIT HEMT STATIC RAM [J].

KOBAYASHI, N ;

NOTOMI, S ;

SUZUKI, M ;

TSUCHIYA, T ;

NISHIUCHI, K ;

ODANI, K ;

SHIBATOMI, A ;

MIMURA, T ;

ABE, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) :548-553

[9]

MACTAGGART IR, IN PRESS

[10]

NISHIUCHI K, 1984, FEB ISSCC, P48

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