EXCIMER LASER CLEANING, ANNEALING, AND ABLATION OF BETA-SIC

被引:20
作者
PEHRSSON, PE [1 ]
KAPLAN, R [1 ]
机构
[1] USN,RES LAB,DIV ELECTR TECHNOL,SURFACE PHYS BRANCH,WASHINGTON,DC 20375
关键词
D O I
10.1557/JMR.1989.1480
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1480 / 1490
页数:11
相关论文
共 54 条
[1]   SURFACE GRAPHITIZATION PROCESS OF SIC(0001) SINGLE-CRYSTAL AT ELEVATED-TEMPERATURES [J].
ADACHI, S ;
MOHRI, M ;
YAMASHINA, T .
SURFACE SCIENCE, 1985, 161 (2-3) :479-490
[2]  
Air Force Cambridge Research Laboratories (U.S.)
[3]  
University of South Carolina in: Silicon Carbide, 1974, SILICON CARBIDE 1973
[4]   STRUCTURAL-PROPERTIES OF A-SIC-H-ALLOYS AND A-SIN-H-ALLOYS FROM XPS-ANALYSES AND IR-ABSORPTION [J].
BAUER, GH ;
MOHRING, HD ;
BILGER, G ;
EICKE, A .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :873-876
[5]   SURFACE MODIFICATION STRATEGIES FOR (100)3C-SIC [J].
BELLINA, JJ ;
FERRANTE, J ;
ZELLER, MV .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :1692-1695
[6]   STOICHIOMETRIC CHANGES IN THE SURFACE OF (100) CUBIC SIC CAUSED BY ION-BOMBARDMENT AND ANNEALING [J].
BELLINA, JJ ;
ZELLER, MV .
APPLIED SURFACE SCIENCE, 1986, 25 (04) :380-390
[7]   AUGER AND ELECTRON ENERGY-LOSS STUDY OF THE PD/SIC INTERFACE AND ITS DEPENDENCE ON OXIDATION [J].
BERMUDEZ, VM .
APPLICATIONS OF SURFACE SCIENCE, 1983, 17 (01) :12-22
[8]   CHANGES IN THE SURFACE-COMPOSITION OF SI, TIO2, AND SIO2 INDUCED BY PULSED RUBY-LASER IRRADIATION [J].
BERMUDEZ, VM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (01) :51-57
[9]   INVESTIGATION OF LASER-ANNEALED ANTIMONY IMPLANTED SI BY ION BACKSCATTERING AND CHANNELING AND STRUCTURE-ANALYSIS [J].
BHATTACHARYA, PK ;
KANSARA, MJ ;
NATHAN, TPS ;
SINGH, P ;
WAGH, AG .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 39 (02) :147-153
[10]  
BOSZO F, 1984, J VAC SCI TECHNOL A, V2, P1271