ON THE ESTIMATION OF DEPTH RESOLUTION DURING SPUTTER PROFILING

被引：26

作者：

PETRAVIC, M ^{[1
]}

SVENSSON, BG ^{[1
]}

WILLIAMS, JS ^{[1
]}

机构：

[1] ROYAL INST TECHNOL,S-16428 KISTA,SWEDEN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 03期

关键词：

D O I：

10.1063/1.108989

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have estimated broadening of sputter profiles for several elements, either buried or implanted in Si, under Ar+, Cs+, and O2+ bombardment using a semiempirical model developed recently by P. C. Zalm and C. J. Vriezema [Nucl. Instrum. Methods B 67, 495 (1992)]. Excellent agreement has been found between this model and experimental data for all three types of primary ions. In the case of oxygen bombardment, however, good agreement is only achieved by taking into account beam-induced changes at the surface, including swelling and the formation of a surface oxide.

引用

页码：278 / 280

页数：3

共 21 条

[1] DEPTH RESOLUTION OF SPUTTER PROFILING [J].