ON THE EFFECTS OF HEAT TREATMENT ON THE RESISTIVITY OF SILICON

被引：3

作者：

DOMENICALI, CA

LI, CH

NOMURA, KC

STEVENSON, A

机构：

来源：

ACTA METALLURGICA | 1957年 / 5卷 / 02期

关键词：

D O I：

10.1016/0001-6160(57)90145-1

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

引用

页码：120 / 122

页数：3

共 11 条

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[7] RESISTIVITY CHANGES IN SILICON SINGLE CRYSTALS INDUCED BY HEAT TREATMENT [J].

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[9] VACANCIES AND INTERSTITIALS IN GERMANIUM AND SILICON [J].

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[10] SILICON N-P-N GROWN JUNCTION TRANSISTORS [J].

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