ON THE THEORY OF ENHANCED DIFFUSION IN HIGH-TEMPERATURE ANTIMONY-IMPLANTED SILICON

被引：4

作者：

ANTONCIK, E

机构：

[1] Institute of Physics, Aarhus University

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1993年 / 127卷 / 01期

关键词：

ENHANCED DIFFUSION; ANTIMONY; IMPLANTATION;

D O I：

10.1080/10420159308219899

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

A simple model is proposed to explain the enhanced diffusion of antimony impurities implanted at high temperatures into silicon. as measured by Gamo et al. It turns out that the concentration profiles can be calculated using a system of reaction-diffusion equations describing the diffusion and decay of impurity-vacancy pairs created during the implantation process. A good agreement with experiment has been obtained.

引用

页码：75 / 82

页数：8

共 10 条

[1]

Antoncik E., 1986, Radiation Effects, V88, P217, DOI 10.1080/00337578608207481

[2] ON THE LATTICE LOCATION OF IMPLANTED IMPURITIES IN SILICON [J].