THE GROWTH OF THIN CU FILMS ON AN O-PRECOVERED RU(0001) SURFACE STUDIED BY LOW-ENERGY ION-BEAMS

被引：13

作者：

SHEN, YG

OCONNOR, DJ

VANZEE, H

WANDELT, K

MACDONALD, RJ

机构：

[1] EINDHOVEN UNIV TECHNOL,FAC PHYS,5600 MB EINDHOVEN,NETHERLANDS

[2] EINDHOVEN UNIV TECHNOL,SCHUIT INST CATALYSIS,5600 MB EINDHOVEN,NETHERLANDS

[3] UNIV BONN,INST PHYS & THEORET CHEM,W-5300 BONN 1,GERMANY

来源：

THIN SOLID FILMS | 1995年 / 263卷 / 01期

基金：

澳大利亚研究理事会;

关键词：

ION SCATTERING; OXYGEN; RUTHENIUM; SURFACE SEGREGATION;

D O I：

10.1016/0040-6090(95)06551-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth of thin Cu films on an O-precovered Ru(0001) surface has been studied by low-energy ion scattering, Auger electron spectroscopy and low-energy electron diffraction. During deposition of Cu, the majority of oxygen (about 70%) originally on the clean Ru(0001) surface was found to float out onto the top of the surface of the growing film. This displacement process could be observed up to a Cu coverage of 10 monolayers, which appeared to be independent of the deposition rate, the O precoverage and the substrate temperature. The floating O atoms in the top layer have been determined to be a disordered overlayer by measuring the azimuthal scan dependence at grazing incidence.

引用

收藏

页码：72 / 78

页数：7

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