STRUCTURE OF LATTICE-MATCHED CAXSR1-XF2 EPILAYERS ON GAAS(111)B SURFACE ANALYZED BY THE X-RAY STANDING-WAVE METHOD

被引:18
作者
SAITOH, Y
HASHIZUME, H
TSUTSUI, K
机构
[1] TOKYO INST TECHNOL,ENGN RES LAB,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN
[2] TOKYO INST TECHNOL,GRAD SCH GENET & CELL BIOL,DEPT APPL ELECTR,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 08期
关键词
D O I
10.1143/JJAP.27.1386
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1386 / 1396
页数:11
相关论文
共 25 条
  • [1] STRUCTURAL-ANALYSIS OF THE NISI2/(111)SI INTERFACE BY THE X-RAY STANDING-WAVE METHOD
    AKIMOTO, K
    ISHIKAWA, T
    TAKAHASHI, T
    KIKUTA, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (11): : 1425 - 1431
  • [2] ANGULAR-DEPENDENCE OF THE ABSORPTION-INDUCED NODAL PLANE SHIFTS OF X-RAY STATIONARY WAVES
    AUTHIER, A
    [J]. ACTA CRYSTALLOGRAPHICA SECTION A, 1986, 42 : 414 - 426
  • [3] BATTERMAN BW, 1964, PHYS REV A, V133, P759
  • [4] 2-BEAM DYNAMICAL DIFFRACTION SOLUTION OF THE PHASE PROBLEM - A DETERMINATION WITH X-RAY STANDING-WAVE FIELDS
    BEDZYK, MJ
    MATERLIK, G
    [J]. PHYSICAL REVIEW B, 1985, 32 (10): : 6456 - 6463
  • [5] EFFECT OF CRYSTAL PERFECTION AND POLARITY ON ABSORPTION EDGES SEEN IN BRAGG DIFFRACTION
    COLE, H
    STEMPLE, NR
    [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (07) : 2227 - &
  • [6] X-RAY STANDING WAVES AT CRYSTAL-SURFACES
    COWAN, PL
    GOLOVCHENKO, JA
    ROBBINS, MF
    [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (25) : 1680 - 1683
  • [7] MBE-GROWN FLUORIDE FILMS - A NEW CLASS OF EPITAXIAL DIELECTRICS
    FARROW, RFC
    SULLIVAN, PW
    WILLIAMS, GM
    JONES, GR
    CAMERON, DC
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 415 - 420
  • [8] STRUCTURE DETERMINATION OF THE COSI2-SI(111) INTERFACE BY X-RAY STANDING-WAVE ANALYSIS
    FISCHER, AEMJ
    VLIEG, E
    VANDERVEEN, JF
    CLAUSNITZER, M
    MATERLIK, G
    [J]. PHYSICAL REVIEW B, 1987, 36 (09): : 4769 - 4773
  • [9] ELASTIC CONSTANTS OF STRONTIUM FLUORIDE BETWEEN 4.2 + 300 DEGREES K
    GERLICH, D
    [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 136 (5A): : 1366 - &
  • [10] ANALYSIS OF EPITAXIAL FLUORIDE-SEMICONDUCTOR INTERFACES
    GIBSON, JM
    PHILLIPS, JM
    [J]. APPLIED PHYSICS LETTERS, 1983, 43 (09) : 828 - 830