ELECTRON-PARAMAGNETIC RESONANCE OF ISOLATED AS-GA+ ANTISITE DEFECT IN NEUTRON-TRANSMUTATION DOPED SEMI-INSULATING GAAS

被引：13

作者：

MANASREH, MO ^{[1
]}

MCDONALD, PF ^{[1
]}

KIVLIGHN, SA ^{[1
]}

MINTON, JT ^{[1
]}

COVINGTON, BC ^{[1
]}

机构：

[1] SAM HOUSTON STATE UNIV,DEPT PHYS,HUNTSVILLE,TX 77341

来源：

SOLID STATE COMMUNICATIONS | 1988年 / 65卷 / 11期

关键词：

LIGHT; -; Applications; NEUTRONS;

D O I：

10.1016/0038-1098(88)90073-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The isolated As//G//a antisite defect produced by the neutron- transmutation doping in semi-insulating GaAs was studied using the electron paramagnetic resonance technique. The results show that the optically induced quenching of the isolated As//G//a plus antisite defect is quite different from that of the EL2 center. Illumination with white light seems to always reduce the electron paramagnetic resonance spectrum suggesting that depopulation of the EL2 center does not introduce a noticeable change in the As//G//a plus antisite concentration.

引用

页码：1267 / 1269

页数：3

共 19 条

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