EPITAXIAL-GROWTH OF (001) AL ON (111) SI BY VAPOR-DEPOSITION

被引：23

作者：

THANGARAI, N

WESTMACOTT, KH

DAHMEN, U

机构：

[1] National Center for Electron Microscopy, Lawrence Berkeley Laboratory, University of California, Berkeley

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 08期

关键词：

D O I：

10.1063/1.107726

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heteroepitaxial growth of (001) Al thin films on Si (111) single crystal substrates by vapor deposition was studied by means of x-ray diffraction, Rutherford backscattering spectrometry, and transmission electron microscopy techniques. It was observed that the films deposited at room temperature exhibit random (111) texture, while the films deposited at 280-degrees-C show perfect epitaxial alignment of (001) Al planes with (111) Si planes. In the interface plane [110] close packed directions in both the film and the substrate are parallel and hence Al grows with three orientation variants in a unique mazed tricrystal arrangement.

引用

页码：913 / 915

页数：3

共 15 条

[1] CHO CC, 1991, MATER RES SOC SYMP P, V221, P87, DOI 10.1557/PROC-221-87
[2] EPITAXIAL-GROWTH OF AL(111) SI(111) FILMS USING PARTIALLY IONIZED BEAM DEPOSITION
CHOI, CH
HARPER, RA
YAPSIR, AS
LU, TM
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (24) : 1992 - 1994
[3] DHEURLE F, 1968, T METALL SOC AIME, V242, P502
[4] DOUIN J, 1991, PHILOS MAG B, V53, P867
[5] EPITAXIAL-GROWTH OF AL ON SI(100) AND SI(111) BY EVAPORATION IN UHV
HASAN, MA
RADNOCZI, G
SUNDGREN, JE
[J]. VACUUM, 1990, 41 (4-6) : 1121 - 1123
[6] CHANNELING STUDY OF STRUCTURAL EFFECTS AT THE AL(111)/SI(111) INTERFACE FORMED BY IONIZED CLUSTER BEAM DEPOSITION
JIN, HS
YAPSIR, AS
LU, TM
GIBSON, WM
YAMADA, I
TAKAGI, I
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (16) : 1062 - 1064
[7] EPITAXIAL-GROWTH OF AL ON SI BY GAS-TEMPERATURE-CONTROLLED CHEMICAL VAPOR-DEPOSITION
KOBAYASHI, T
SEKIGUCHI, A
HOSOKAWA, N
ASAMAKI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (09): : L1775 - L1777
[8] ATOMIC-STRUCTURE OF THE EPITAXIAL AL-SI INTERFACE
LEGOUES, FK
KRAKOW, W
HO, PS
[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1986, 53 (06): : 833 - 841
[9] TEMPERATURE-DEPENDENCE OF EPITAXIAL-GROWTH OF AL ON SI(111) BY CHEMICAL VAPOR-DEPOSITION
NISHIKAWA, S
TANI, K
YAMAJI, T
[J]. JOURNAL OF MATERIALS RESEARCH, 1992, 7 (02) : 345 - 351
[10] EPITAXIAL-GROWTH OF (011) AL ON (100) SI BY VAPOR-DEPOSITION
THANGARAJ, N
WESTMACOTT, KH
DAHMEN, U
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (01) : 37 - 39

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