SURFACE IMAGING RESISTS FOR 193-NM LITHOGRAPHY

被引：20

作者：

JOHNSON, DW ^{[1
]}

HARTNEY, MA ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 12B期

关键词：

193-NM LITHOGRAPHY; SURFACE IMAGING RESISTS; SILYLATION; PLASMA DEVELOPED RESIST; NOVOLAC RESIST; POLYVINYLPHENOL RESIST;

D O I：

10.1143/JJAP.31.4321

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

193 nm radiation causes direct photocrosslinking of polymer films which is sufficient to generate silylation selectivity under appropriate conditions. A variety of phenolic based polymers and blends with photoactive compounds were studied for their suitability as resists in a 193 nm, positive-tone, silylation process. Meta-cresol novolac resists and polyvinylphenol resists show the best sensitivity for this process. The threshold dose required to restrict diffusion of the silylating agent depends strongly on the composition of the resist. Sensitivities range from 12 mJ/cm2 to over 100 mJ/cm2 for various novolac and polyvinylphenol materials. Wide variations in sensitivity have been found between different synthetic methods for the same resin, different molecular weight characteristics, and different functional modifications.

引用

页码：4321 / 4326

页数：6

共 10 条

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