STRAINS IN CRYSTALS WITH AMORPHOUS SURFACE-FILMS STUDIED BY CONVERGENT-BEAM ELECTRON-DIFFRACTION AND HIGH-RESOLUTION IMAGING

被引：25

作者：

BANHART, F

机构：

[1] Max-Planck-Institut für Metallforschung, Institut für Physik, D-70506 Stuttgart

来源：

ULTRAMICROSCOPY | 1994年 / 56卷 / 04期

关键词：

D O I：

10.1016/0304-3991(94)90011-6

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Cross-sectional specimens from crystals which are covered with amorphous surface films such as oxide or epoxy are investigated using large-angle convergent beam electron diffraction (LACBED). Stresses at the crystalline/amorphous interface are induced by the amorphous layer and lead to a relaxation of the lattice in the interfacial region during thinning of the specimen. It is shown that lattice images of crystal regions close to a crystalline/amorphous interface may be affected considerably by relaxation effects.

引用

页码：233 / 240

页数：8

共 18 条

[1] CONVERGENT-BEAM ELECTRON-DIFFRACTION STUDIES OF EPITAXIAL SI/SIO2 SYSTEMS [J].

BANHART, F ;

NAGEL, N .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1994, 70 (02) :341-357

[2] DIRECT MEASUREMENT OF LOCAL LATTICE-DISTORTIONS IN STRAINED LAYER STRUCTURES BY HREM [J].

BIERWOLF, R ;

HOHENSTEIN, M ;

PHILLIPP, F ;

BRANDT, O ;

CROOK, GE ;

PLOOG, K .

ULTRAMICROSCOPY, 1993, 49 (1-4) :273-285

[3] ENHANCED X-RAY DIFFRACTION FROM SUBSTRATE CRYSTALS CONTAINING DISCONTINUOUS SURFACE FILMS [J].

BLECH, IA ;

MEIERAN, ES .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) :2913-&

[4] CONVERGENT BEAM ELECTRON-DIFFRACTION STUDIES OF STRAIN IN SI/SIGE SUPERLATTICES [J].

CHERNS, D ;

TOUAITIA, R ;

PRESTON, AR ;

ROSSOUW, CJ ;

HOUGHTON, DC .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1991, 64 (03) :597-612

[5] HIGH-RESOLUTION SHADOW IMAGE SUPERIMPOSED ON LACBED PATTERNS - A METHOD DEMONSTRATED ON GEXSI1-X/SI SUPERLATTICE [J].

DUAN, XF .

ULTRAMICROSCOPY, 1992, 41 (1-3) :249-252

[6]

EADES JA, 1987, I PHYS C SER, V90, P109

[7]

FRASER HL, 1985, I PHYS C SER, V76, P307

[8] STRESS-RELATED PROBLEMS IN SILICON TECHNOLOGY [J].

HU, SM .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (06) :R53-R80

[9] CBED AND CBIM FROM SEMICONDUCTORS AND SUPERCONDUCTORS [J].

HUMPHREYS, CJ ;

EAGLESHAM, DJ ;

MAHER, DM ;

FRASER, HL .

ULTRAMICROSCOPY, 1988, 26 (1-2) :13-23

[10] A MEASUREMENT OF INTRINSIC SIO2 FILM STRESS RESULTING FROM LOW-TEMPERATURE THERMAL-OXIDATION OF SI [J].

KOBEDA, E ;

IRENE, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (03) :720-722

← 1 2 →