LATERAL-SIZE CONTROL OF TRENCH-BURIED QUANTUM WIRES USING GAAS/ALAS SUPERLATTICE LAYERS

被引：4

作者：

SOGAWA, T

ANDO, S

KANBE, H

机构：

[1] NTT Basic Research Laboratories, Atsugi-Shi, Kanagawa 243-01, 3-1, Morinosato-Wakamiya

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1995年 / 34卷 / 8B期

关键词：

TRENCH; QUANTUM WIRE; TRENCH-BURIED QUANTUM WIRE; SUPERLATTICE; V-GROOVE;

D O I：

10.1143/JJAP.34.4405

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated the lateral-size control of GaAs/AlAs trench-buried quantum wires (QWRs) in the region below 20 nm by using GaAs/AlAs superlattice layers (SLs). Scanning electron microscopy images and photoluminescence properties of the trench-buried QWRs revealed that the trench width can be controlled by varying the number of SLs and reduced to about 13 nm by growing 7 pairs of SLs. The GaAs wires in the trenches have a tendency to grow so as to maintain a constant cross-sectional area, which leads to reduction of the energetic broadening of the quantum sub-levels caused by pattern size fluctuation.

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收藏

页码：4405 / 4407

页数：3

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