STRUCTURAL CHARACTERIZATION OF EPITAXIAL BISRCACUO FILMS ON MGO SUBSTRATES

被引：6

作者：

RANNO, L

PERRIERE, J

SCHNECK, J

机构：

[1] UNIV PARIS 07,URA 17,PHYS SOLIDES GRP,F-75251 PARIS 05,FRANCE

[2] UNIV PARIS 06,URA 17,PHYS SOLIDES GRP,F-75251 PARIS 05,FRANCE

[3] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE

来源：

PHYSICA C | 1995年 / 245卷 / 3-4期

关键词：

D O I：

10.1016/0921-4534(95)00114-X

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the epitaxial growth of thin Bi2Sr2Ca1Cu2O8 films on (001) oriented MgO substrates. These films were grown using the in-situ laser ablation process (700 degrees C, 0.1 mbar oxygen), and they showed a perfect c-axis alignment normal to the substrate, characterised by narrow mosaic distributions and by channeling effects (low chi(min) values) along this direction. Despite the large difference between their lattice parameters (9%), the epitaxial growth of the BiSrCaCuO film on MgO substrate has been found evidence for using X-ray diffraction in transmission geometry, by the observation of three azimuthal adjustments of the a- and b-axes of the films with respect to the a-axis of the substrate (0 degrees, 13 degrees and 45 degrees). The possible origins of such epitaxial relationships are presented and discussed.

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页码：295 / 300

页数：6

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