DIRECT LATTICE ABSORPTION ASSOCIATED WITH SHALLOW IMPURITY LEVELS

被引：9

作者：

HARDY, JR

机构：

来源：

PHILOSOPHICAL MAGAZINE | 1962年 / 7卷 / 78期

关键词：

D O I：

10.1080/14786436208212891

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：953 / &

共 10 条

[1] THE INFRA-RED ABSORPTION OF HOT SEMICONDUCTING DIAMONDS [J].

CLARK, CD ;

KEMMEY, P ;

MITCHELL, EWJ ;

HENVIS, BW .

PHILOSOPHICAL MAGAZINE, 1960, 5 (50) :127-139

[2] EFFECT OF OPTICAL MODE PHONONS ON ABSORPTION SPECTRA OF SHALLOW IMPURITY CENTRES [J].

HARDY, JR .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1962, 79 (512) :1154-&

[3] SCATTERING OF ELECTRONS BY LATTICE VIBRATIONS IN NONPOLAR CRYSTALS [J].

HARRISON, WA .

PHYSICAL REVIEW, 1956, 104 (05) :1281-1290

[4] INFRARED SPECTRA OF GROUP-III ACCEPTORS IN SILICON [J].

HROSTOWSKI, HJ ;

KAISER, RH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 4 (1-2) :148-153

[5] PHONON BROADENING OF IMPURITY LINES [J].

KANE, EO .

PHYSICAL REVIEW, 1960, 119 (01) :40-42

[6] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J].

KOHN, W .

SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 :257-320

[7] HYPERFINE SPLITTING OF DONOR STATES IN SILICON [J].

KOHN, W ;

LUTTINGER, JM .

PHYSICAL REVIEW, 1955, 97 (04) :883-888

[8] BROADENING OF IMPURITY LEVELS IN SILICON [J].

LAX, M ;

BURSTEIN, E .

PHYSICAL REVIEW, 1955, 100 (02) :592-602

[9] OPTICAL PHONON EFFECTS IN INFRA-RED SPECTRUM OF ACCEPTOR CENTRES IN SEMICONDUCTING DIAMOND [J].

SMITH, SD ;

TAYLOR, W .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1962, 79 (512) :1142-&

[10]

WEDEPOHL PT, 1957, P PHYS SOC B, V70, P117

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