EFFECTS OF POSTDEPOSITION ANNEALING TREATMENTS ON CHARGE TRAPPING IN CVDAL2O3 FILMS ON SI

被引：11

作者：

MEHTA, DA

BUTLER, SR

FEIGL, FJ

机构：

[1] WESTERN ELECT CO,ALLENTOWN,PA 18103

[2] LEHIGH UNIV,BETHLEHEM,PA 18015

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 12期

关键词：

D O I：

10.1149/1.2403349

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1707 / 1714

页数：8

共 13 条

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[6] ELECTRONIC CHARGE TRAPPING IN CHEMICAL VAPOR-DEPOSITED THIN-FILMS OF AL2O3 ON SILICON [J].

MEHTA, DA ;

FEIGL, FJ ;

BUTLER, SR .

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[7]

MEHTA DA, 1972, THESIS LEHIGH U

[8] THERMAL TRANSFORMATIONS OF ALUMINAS AND ALUMINA HYDRATES [J].

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RUSSELL, AS ;

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[9]

SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH9

[10] INTERNAL PHOTOEMISSION MEASUREMENTS IN A METAL-A12O3-SI SYSTEM [J].

SZYDLO, N ;

POIRIER, R .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :4880-&

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