ZINC DIFFUSION IN N-TYPE INDIUM-PHOSPHIDE

被引:77
作者
VANGURP, GJ
BOUDEWIJN, PR
KEMPENERS, MNC
TJADEN, DLA
机构
关键词
D O I
10.1063/1.338028
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1846 / 1855
页数:10
相关论文
共 29 条
[1]   APPLICATIONS OF ELECTROCHEMICAL METHODS FOR SEMICONDUCTOR CHARACTERIZATION .1. HIGHLY REPRODUCIBLE CARRIER CONCENTRATION PROFILING OF VPE''HI-LO'' NORMAL-GAAS [J].
AMBRIDGE, T ;
STEVENSON, JL ;
REDSTALL, RM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :222-228
[2]   LOW-TEMPERATURE ZN-DIFFUSION AND CD-DIFFUSION PROFILES IN INP AND FORMATION OF GUARD RING IN INP AVALANCHE PHOTO-DIODES [J].
ANDO, H ;
SUSA, N ;
KANBE, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) :1408-1413
[3]   DIFFUSION IN III-V SEMICONDUCTORS FROM SPIN-ON FILM SOURCES [J].
ARNOLD, N ;
SCHMITT, R ;
HEIME, K .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1984, 17 (03) :443-+
[4]   CHARACTERIZATION OF THIN-LAYERS ON PERFECT CRYSTALS WITH A MULTIPURPOSE HIGH-RESOLUTION X-RAY DIFFRACTOMETER [J].
BARTELS, WJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :338-345
[5]  
BOUDEWIJN PR, 1986, SECONDARY ION MASS S, P270
[6]  
Casey H.C., 1973, ATOMIC DIFFUSION SEM, P351
[7]   DIFFUSION AND SOLUBILITY OF ZINC IN INDIUM PHOSPHIDE [J].
CHANG, LL ;
CASEY, HC .
SOLID-STATE ELECTRONICS, 1964, 7 (06) :481-&
[8]   STUDY OF THE IDEAL-VACANCY-INDUCED NEUTRAL DEEP LEVELS IN III-V COMPOUND SEMICONDUCTORS AND THEIR TERNARY ALLOYS [J].
DASSARMA, S ;
MADHUKAR, A .
PHYSICAL REVIEW B, 1981, 24 (04) :2051-2068
[9]   DIFFUSION OF ZINC INTO ION-IMPLANTED IRON DOPED INDIUM-PHOSPHIDE [J].
FAVENNEC, PN ;
HENRY, L ;
SALVI, M ;
HUBER, AM ;
MORILLOT, G .
SOLID-STATE ELECTRONICS, 1983, 26 (08) :771-775
[10]   OPEN AMPOULE DIFFUSION IN INP [J].
FAVENNEC, PN ;
HENRY, L ;
GAUNEAU, M ;
LHARIDON, H ;
PELOUS, G .
ELECTRONICS LETTERS, 1980, 16 (22) :832-833