COMPLEX BAND-STRUCTURE CALCULATIONS OF THE ELECTRIC-FIELD DEPENDENCE OF THE TRANSMISSION OF HOLES THROUGH A (100) GAAS/ALGAAS/GAAS BARRIER STRUCTURE

被引：2

作者：

MONAGHAN, S

BRAND, S

机构：

[1] Sch of Engineering & Applied, Science, Durham, Engl, Sch of Engineering & Applied Science, Durham, Engl

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1987年 / 3卷 / 06期

关键词：

BAND STRUCTURE - ELECTRIC FIELD EFFECTS - SEMICONDUCTING ALUMINUM COMPOUNDS - Charge Carriers;

D O I：

10.1016/0749-6036(87)90201-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A pseudopotential complex band structure approach is used to investigate the transmission of heavy and light holes through a (100) GaAs/AlGaAs/GaAs barrier structure in the presence of an electric field. The results can be significantly different from those obtained using a simple effective mass model. In particular, for an incident light hole there is large barrier induced mixing with the spin-split-off states which reduces the light hole transmission and excites the transmission of spin-split off states. Transmission through a quantum well structure is also considered and significant effects are seen due to the presence of resonances.

引用

页码：697 / 700

页数：4

共 10 条

[1] CALCULATIONS OF BOUND-STATES IN THE VALENCE BAND OF AIAS/GAAS/AIAS AND AIGAAS/GAAS/AIGAAS QUANTUM-WELLS [J].