LASER-BEAM ANNEALING OF DISCHARGE-PRODUCED AMORPHOUS SILICON

被引：10

作者：

STAEBLER, DL

机构：

[1] RCA Laboratories, Princeton

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 05期

关键词：

D O I：

10.1063/1.326316

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous silicon films prepared by dc glow discharge of silane on room-temperature substrates darken when exposed to a focused laser beam. The process is primarily thermal, has an activation energy of ∼1 eV, and is accompanied by the desorption of hydrogen. It also affects the etch rate in basic solutions. A bleaching effect, not reported before, is seen at low exposures. All coloration changes are permanent. Possible applications for optical storage of information are discussed.

引用

页码：3648 / 3652

页数：5

共 16 条

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