LOW FIELD-STUDY OF P+NN+ OR P+PN+ STRUCTURES IN THE FORWARD DIRECTION

被引：4

作者：

MANIFACIER, JC

JIMENEZ, J

FILLARD, JP

HENISCH, HK

机构：

[1] PENN STATE UNIV,DEPT PHYS,UNIVERSITY PK,PA 16802

[2] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802

来源：

关键词：

D O I：

10.1016/0038-1101(80)90002-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：197 / 199

页数：3

共 5 条

[1] CURRENT TRANSPORT IN RELAXATION-CASE GAAS [J].

ILEGEMS, M ;

QUEISSER, HJ .

PHYSICAL REVIEW B, 1975, 12 (04) :1443-1451

[2]

MANIFACIER JC, 1978, PHYS REV B, V17, P2648, DOI 10.1103/PhysRevB.17.2648

[3] MINORITY-CARRIER INJECTION INTO SEMICONDUCTORS [J].

MANIFACIER, JC ;

HENISCH, HK .

PHYSICAL REVIEW B, 1978, 17 (06) :2640-2647

[4] MINORITY-CARRIER INJECTION INTO SEMI-INSULATORS [J].

POPESCU, C ;

HENISCH, HK .

PHYSICAL REVIEW B, 1976, 14 (02) :517-525

[5] TRANSPORT IN RELAXATION SEMICONDUCTORS [J].

VANROOSB.W ;

CASEY, HC .

PHYSICAL REVIEW B, 1972, 5 (06) :2154-&