Surface oxidation behavior of TiN film caused by depositing SrTiO3 film

被引：5

作者：

Abe, Y ^{[1
]}

Kawamura, M ^{[1
]}

Yanagisawa, H ^{[1
]}

Sasaki, K ^{[1
]}

机构：

[1] KITAMI INST TECHNOL, FAC ENGN, DEPT ELECT & ELECTR ENGN, KITAMI, HOKKAIDO 090, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 12B期

关键词：

oxidation of TIN; electrode material of DRAM capacitor; SrTiO3; film; resistivity; rf magnetron sputtering;

D O I：

10.1143/JJAP.34.L1678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

TiN thin films are prepared by rf magnetron sputtering in order to examine their applicability as bottom electrodes of dynamic random access memory (DRAM) capacitors. On the TiN thin films, SrTiO3 thin films are deposited in various O-2/(Ar+O-2) sputtering gas flow ratios and substrate temperatures, and the amount of TiN which is conv erted to oxide during SrTiO3 deposition is evaluated from the change in its resistance. Thickness of the oxidized TiN was reduced from 43 nm to 7 nm by decreasing the O-2 flow ratio from 100% to O% and decreasing the substrate temperature from 400 degrees C to 300 degrees C during SrTiO3 deposition, The applicability of the TiN thin film as a bottom electrode of DRAM capacitors is discussed.

引用

页码：L1678 / L1681

页数：4