LOW-TEMPERATURE ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION OF VERY-LOW RESISTIVITY TIN FOR INP METALLIZATION USING METALORGANIC PRECURSORS

被引：11

作者：

BOUMERZOUG, M

MASCHER, P

SIMMONS, JG

机构：

[1] Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 20期

关键词：

D O I：

10.1063/1.113118

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Titanium nitride (TiN) thin films were deposited onto Si and InP using the electron cyclotron resonance chemical vapor deposition technique. Tetrakis(dimethylamido)titanium (TDMATi) was used as a precursor. Depositions onto unheated substrates were carried out downstream of a nitrogen plasma. Stoichiometric (Ti:N≈1) and very low resistivity (43 μΩ cm) films were obtained at a deposition rate of 13 Å/min. The carbon and oxygen contaminants in the films were below the detectability limits of Rutherford backscattering and Auger electron spectroscopy. The Auger depth profile shows that the TiN/InP structure is stable for rapid thermal annealing up to 800°C.© 1995 American Institute of Physics.

引用

页码：2664 / 2666

页数：3

共 17 条

[1]

AKAHORI T, 1991, JPN J APPL PHYS B, V12, P3558

[2] ANALYTICAL ELECTRON-MICROSCOPY OF AL/TIN CONTACTS ON SILICON FOR APPLICATIONS TO VERY LARGE-SCALE INTEGRATED DEVICES [J].

ARMIGLIATO, A ;

VALDRE, G .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (01) :390-396

[3] ROOM-TEMPERATURE ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION OF HIGH-QUALITY TIN [J].

BOUMERZOUG, M ;

PANG, ZD ;

BOUDREAU, M ;

MASCHER, P ;

SIMMONS, JG .

APPLIED PHYSICS LETTERS, 1995, 66 (03) :302-304

[4]

BOUMERZOUG M, 1991, INT SOC OPT ENG P, V1594, P401

[5]

Feingold A., 1994, Materials Science Forum, V148-149, P61, DOI 10.4028/www.scientific.net/MSF.148-149.61

[6] CHARACTERIZATION OF REACTIVELY EVAPORATED TIN LAYERS FOR DIFFUSION BARRIER APPLICATIONS [J].

GAGNON, G ;

CURRIE, JF ;

BEIQUE, G ;

BREBNER, JL ;

GUJRATHI, SC ;

OUELLET, L .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (03) :1565-1570

[7] STRUCTURE AND ELECTRICAL-PROPERTIES OF TITANIUM NITRIDE FILMS [J].

IGASAKI, Y ;

MITSUHASHI, H ;

AZUMA, K ;

MUTO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (01) :85-96

[8] GROWTH AND PROPERTIES OF SINGLE-CRYSTAL TIN FILMS DEPOSITED BY REACTIVE MAGNETRON SPUTTERING [J].

JOHANSSON, BO ;

SUNDGREN, JE ;

GREENE, JE ;

ROCKETT, A ;

BARNETT, SA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (02) :303-307

[9] REACTIVITY OF NITROGEN IN TITANIUM NITRIDE FILM FORMATION BY THE REACTIVE ION PLATING PROCESS [J].

MATSUMURA, Y ;

CHUJO, T ;

UCHIDA, H ;

UCHIDA, HH .

SURFACE & COATINGS TECHNOLOGY, 1993, 60 (1-3) :489-492

[10] LOW-TEMPERATURE RADIO-FREQUENCY SPUTTER-DEPOSITION OF TIN THIN-FILMS USING OPTICAL-EMISSION SPECTROSCOPY AS PROCESS MONITOR [J].

PANG, Z ;

BOUMERZOUG, M ;

KRUZELECKY, RV ;

MASCHER, P ;

SIMMONS, JG ;

THOMPSON, DA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1994, 12 (01) :83-89

← 1 2 →