ETCHING OF INAS IN HCL-GAS AND SELECTIVE REMOVAL OF INAS LAYER ON GAAS IN ULTRAHIGH-VACUUM PROCESSING SYSTEM

被引：4

作者：

KADOYA, Y ^{[1
]}

YOSHIDA, T ^{[1
]}

SOMEYA, T ^{[1
]}

AKIYAMA, H ^{[1
]}

NOGE, H ^{[1
]}

SAKAKI, H ^{[1
]}

机构：

[1] UNIV TOKYO, ADV SCI & TECHNOL RES CTR, MEGURO KU, TOKYO 153, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 10B期

关键词：

GAS ETCHING; ETCHING SELECTIVITY; HCL; GAAS; INAS; MOLECULAR BEAM EPITAXY; IN-SITU PROCESSING; PHOTOLUMINESCENCE; QUANTUM WELL; REGROWTH;

D O I：

10.1143/JJAP.32.L1496

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The etch rate of InAs in HCl gas is studied for the first time and is found to be far greater than that of GaAs. The complete removal of an InAs layer grown on GaAs was achieved by this etching, resulting in a very flat surface. This is confirmed by the photoluminescence study on a novel GaAs/AlGaAs quantum well (QW), which was prepared by depositing a 50 nm InAs film at the center of the well, and subsequently etching it off before the remainder of the QW was formed. This unique selectivity can be employed to remove an InAs film which is used in the in situ patterning technique of GaAs.

引用

页码：L1496 / L1499

页数：4

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