GALVANOMAGNETIC THEORY FOR N-TYPE GERMANIUM AND SILICON - HALL THEORY AND GENERAL BEHAVIOR OF MAGNETORESISTANCE

被引：18

作者：

GOLD, L

ROTH, LM

机构：

来源：

PHYSICAL REVIEW | 1957年 / 107卷 / 02期

关键词：

D O I：

10.1103/PhysRev.107.358

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：358 / 364

页数：7

共 6 条

[1] BENEDEK, 1955, PHYS REV, V100, P1129
[2] GALVANOMAGNETIC THEORY FOR ELECTRONS IN GERMANIUM AND SILICON - MAGNETORESISTANCE IN THE HIGH-FIELD SATURATION LIMIT
GOLD, L
ROTH, LM
[J]. PHYSICAL REVIEW, 1956, 103 (01): : 61 - 66
[3] ANISOTROPY OF THE HOT-ELECTRON PROBLEM IN SEMICONDUCTORS WITH SPHEROIDAL ENERGY SURFACES
GOLD, L
[J]. PHYSICAL REVIEW, 1956, 104 (06): : 1580 - 1584
[4] HALL THEORY IN N-TYPE GERMANIUM
GOLD, L
[J]. PHYSICAL REVIEW, 1955, 99 (02): : 596 - 596
[5] THE MAGNETO-RESISTANCE EFFECT IN ORIENTED SINGLE CRYSTALS OF GERMANIUM
PEARSON, GL
SUHL, H
[J]. PHYSICAL REVIEW, 1951, 83 (04): : 768 - 776
[6] MAGNETO-RESISTANCE EFFECT AND THE BAND STRUCTURE OF SINGLE CRYSTAL SILICON
PEARSON, GL
HERRING, C
[J]. PHYSICA, 1954, 20 (11): : 975 - 978