ELECTRON MICROSCOPE STUDIES ON THE ETCHING OF IRRADIATED GERMANIUM

被引：13

作者：

NOGGLE, TS

STIEGLER, JO

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1959年 / 30卷 / 08期

关键词：

D O I：

10.1063/1.1735306

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1279 / 1288

页数：10

共 12 条

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[2]

CLELAND JW, COMMUNICATION

[3]

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[4] SURFACE STUDIES ON SINGLE-CRYSTAL GERMANIUM [J].

ELLIS, SG .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (11) :1262-1269

[5]

FAN HY, 1958, SEMICONDUCTORS PHOSP, P113

[6] DAMAGE TO SILICON PRODUCED BY BOMBARDMENT WITH HELIUM IONS [J].

GIANOLA, UF .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) :868-873

[7] THE GERMANIUM-OXYGEN SYSTEM [J].

HOCH, M ;

JOHNSTON, HL .

JOURNAL OF CHEMICAL PHYSICS, 1954, 22 (08) :1376-1377

[8] THE EQUILIBRIUM GE(S) + GEO2(S) = 2GEO(G) - THE HEAT OF FORMATION OF GERMANIC OXIDE [J].

JOLLY, WL ;

LATIMER, WM .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1952, 74 (22) :5757-5758

[9]

RICHTER H, 1951, Z NATURFORSCH A, V6, P38

[10] MAGNETIC SUSCEPTIBILITY OF GERMANIUM [J].

STEVENS, DK ;

CLELAND, JW ;

CRAWFORD, JH ;

SCHWEINLER, HC .

PHYSICAL REVIEW, 1955, 100 (04) :1084-1093

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