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SELF-ALIGNMENT TECHNIQUES FOR GAAS-MESFET ICS
被引:2
作者
:
BLAND, SW
论文数:
0
引用数:
0
h-index:
0
BLAND, SW
WOOD, D
论文数:
0
引用数:
0
h-index:
0
WOOD, D
MUN, J
论文数:
0
引用数:
0
h-index:
0
MUN, J
机构
:
来源
:
JOURNAL OF THE INSTITUTION OF ELECTRONIC AND RADIO ENGINEERS
|
1987年
/ 57卷
/ 01期
关键词
:
D O I
:
10.1049/jiere.1987.0002
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:S84 / S91
页数:8
相关论文
共 44 条
[1]
PIEZOELECTRIC EFFECTS IN GAAS-FETS AND THEIR ROLE IN ORIENTATION-DEPENDENT DEVICE CHARACTERISTICS
ASBECK, PM
论文数:
0
引用数:
0
h-index:
0
ASBECK, PM
LEE, CP
论文数:
0
引用数:
0
h-index:
0
LEE, CP
CHANG, MCF
论文数:
0
引用数:
0
h-index:
0
CHANG, MCF
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1984,
31
(10)
: 1377
-
1380
[2]
CATHELIN M, 1978, SEP EUR MICR C P PAR, P55
[3]
SELF-ALIGNED MESFETS BY A DUAL-LEVEL DOUBLE-LIFT-OFF SUBSTITUTIONAL GATE (DDS) TECHNIQUE FOR HIGH-SPEED LOW-POWER GAAS ICS
CHANG, MF
论文数:
0
引用数:
0
h-index:
0
CHANG, MF
RYAN, FJ
论文数:
0
引用数:
0
h-index:
0
RYAN, FJ
VAHRENKAMP, RP
论文数:
0
引用数:
0
h-index:
0
VAHRENKAMP, RP
KIRKPATRICK, CG
论文数:
0
引用数:
0
h-index:
0
KIRKPATRICK, CG
[J].
ELECTRONICS LETTERS,
1985,
21
(08)
: 354
-
356
[4]
REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY
CHOW, TP
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12181 USA
RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12181 USA
CHOW, TP
STECKL, AJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12181 USA
RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12181 USA
STECKL, AJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1983,
30
(11)
: 1480
-
1497
[5]
ABOVE 10 GHZ FREQUENCY-DIVIDERS WITH GAAS ADVANCED SAINT AND AIR-BRIDGE TECHNOLOGY
ENOKI, T
论文数:
0
引用数:
0
h-index:
0
ENOKI, T
YAMASAKI, K
论文数:
0
引用数:
0
h-index:
0
YAMASAKI, K
OSAFUNE, K
论文数:
0
引用数:
0
h-index:
0
OSAFUNE, K
OHWADA, K
论文数:
0
引用数:
0
h-index:
0
OHWADA, K
[J].
ELECTRONICS LETTERS,
1986,
22
(02)
: 68
-
69
[6]
FLAHIVE PG, 1982, IEEE GAAS IC S, P184
[7]
HELIX MJ, 1984, IEEE GAAS IC S, P163
[8]
AU/TIN/WSI-GATE SELF-ALIGNED GAAS-MESFETS USING RAPID THERMAL ANNEALING METHOD
IMAMURA, K
论文数:
0
引用数:
0
h-index:
0
IMAMURA, K
OHNISHI, T
论文数:
0
引用数:
0
h-index:
0
OHNISHI, T
SHIGAKI, M
论文数:
0
引用数:
0
h-index:
0
SHIGAKI, M
YOKOYAMA, N
论文数:
0
引用数:
0
h-index:
0
YOKOYAMA, N
NISHI, H
论文数:
0
引用数:
0
h-index:
0
NISHI, H
[J].
ELECTRONICS LETTERS,
1985,
21
(18)
: 804
-
805
[9]
ISHII Y, 1984, IEEE GAAS IC S, P121
[10]
KASAHARA J, 1985, IEEE GAAS IC S, P37
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共 44 条
[1]
PIEZOELECTRIC EFFECTS IN GAAS-FETS AND THEIR ROLE IN ORIENTATION-DEPENDENT DEVICE CHARACTERISTICS
ASBECK, PM
论文数:
0
引用数:
0
h-index:
0
ASBECK, PM
LEE, CP
论文数:
0
引用数:
0
h-index:
0
LEE, CP
CHANG, MCF
论文数:
0
引用数:
0
h-index:
0
CHANG, MCF
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1984,
31
(10)
: 1377
-
1380
[2]
CATHELIN M, 1978, SEP EUR MICR C P PAR, P55
[3]
SELF-ALIGNED MESFETS BY A DUAL-LEVEL DOUBLE-LIFT-OFF SUBSTITUTIONAL GATE (DDS) TECHNIQUE FOR HIGH-SPEED LOW-POWER GAAS ICS
CHANG, MF
论文数:
0
引用数:
0
h-index:
0
CHANG, MF
RYAN, FJ
论文数:
0
引用数:
0
h-index:
0
RYAN, FJ
VAHRENKAMP, RP
论文数:
0
引用数:
0
h-index:
0
VAHRENKAMP, RP
KIRKPATRICK, CG
论文数:
0
引用数:
0
h-index:
0
KIRKPATRICK, CG
[J].
ELECTRONICS LETTERS,
1985,
21
(08)
: 354
-
356
[4]
REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY
CHOW, TP
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12181 USA
RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12181 USA
CHOW, TP
STECKL, AJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12181 USA
RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12181 USA
STECKL, AJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1983,
30
(11)
: 1480
-
1497
[5]
ABOVE 10 GHZ FREQUENCY-DIVIDERS WITH GAAS ADVANCED SAINT AND AIR-BRIDGE TECHNOLOGY
ENOKI, T
论文数:
0
引用数:
0
h-index:
0
ENOKI, T
YAMASAKI, K
论文数:
0
引用数:
0
h-index:
0
YAMASAKI, K
OSAFUNE, K
论文数:
0
引用数:
0
h-index:
0
OSAFUNE, K
OHWADA, K
论文数:
0
引用数:
0
h-index:
0
OHWADA, K
[J].
ELECTRONICS LETTERS,
1986,
22
(02)
: 68
-
69
[6]
FLAHIVE PG, 1982, IEEE GAAS IC S, P184
[7]
HELIX MJ, 1984, IEEE GAAS IC S, P163
[8]
AU/TIN/WSI-GATE SELF-ALIGNED GAAS-MESFETS USING RAPID THERMAL ANNEALING METHOD
IMAMURA, K
论文数:
0
引用数:
0
h-index:
0
IMAMURA, K
OHNISHI, T
论文数:
0
引用数:
0
h-index:
0
OHNISHI, T
SHIGAKI, M
论文数:
0
引用数:
0
h-index:
0
SHIGAKI, M
YOKOYAMA, N
论文数:
0
引用数:
0
h-index:
0
YOKOYAMA, N
NISHI, H
论文数:
0
引用数:
0
h-index:
0
NISHI, H
[J].
ELECTRONICS LETTERS,
1985,
21
(18)
: 804
-
805
[9]
ISHII Y, 1984, IEEE GAAS IC S, P121
[10]
KASAHARA J, 1985, IEEE GAAS IC S, P37
←
1
2
3
4
5
→