BEHAVIOR OF THE 1ST LAYER GROWTH IN GAAS MOLECULAR-BEAM EPITAXY

被引：4

作者：

LIU, DG

LEE, CP

CHANG, KH

WU, JS

LIOU, DC

机构：

[1] Institute of Electronics, National Chiao-Tung University, Hsin-Chu

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 14期

关键词：

D O I：

10.1063/1.103445

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The first layer growth in GaAs molecular beam epitaxy has been studied by reflection high-energy electron diffraction (RHEED). The time between the growth start and the first RHEED intensity peak is found to be dependent on the starting surface condition and is different from the time needed for a single layer growth. Periodic flux interruption has been used to study the surface recovery behavior as a function of growth time. When the growth time is the same as the time for a single layer growth, sustained two-dimensional growth can be obtained.

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页码：1392 / 1394

页数：3

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