THEORETICAL-STUDY OF HIGH-DENSITY PHASES OF COVALENT SEMICONDUCTORS .2. EMPIRICAL-TREATMENT

被引:31
作者
CLARK, SJ
ACKLAND, GJ
CRAIN, J
机构
[1] Department of Physics, University of Edinburgh, Edinburgh
来源
PHYSICAL REVIEW B | 1994年 / 49卷 / 08期
关键词
D O I
10.1103/PhysRevB.49.5341
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We show that a simple pairwise model for covalent materials provides a good description of the high-density fourfold-coordinated metastable phases BC8 and ST12, in agreement with experimental results and ab initio calculations. We use this potential to study the high-pressure behavior and the free energy. We find that both phases are metastable at all temperatures. The relative energetic stability depends on the parametrization, but the ST12 phase has higher entropy. We therefore conclude that with correct pressure and temperature treatment it may be possible to synthesize ST12 as a high-density metastable phase in Si.
引用
收藏
页码:5341 / 5352
页数:12
相关论文
共 25 条
[1]   SEMIEMPIRICAL MODEL OF COVALENT BONDING IN SILICON [J].
ACKLAND, G .
PHYSICAL REVIEW B, 1989, 40 (15) :10351-10355
[2]   INTERPRETATION OF CLUSTER STRUCTURES IN TERMS OF COVALENT BONDING [J].
ACKLAND, GJ .
PHYSICAL REVIEW B, 1991, 44 (08) :3900-3908
[3]  
ACKLAND GJ, 1987, THESIS OXFORD U
[4]   COMPARATIVE-STUDY OF SILICON EMPIRICAL INTERATOMIC POTENTIALS [J].
BALAMANE, H ;
HALICIOGLU, T ;
TILLER, WA .
PHYSICAL REVIEW B, 1992, 46 (04) :2250-2279
[6]   ELECTRICAL-PROPERTIES OF SEMIMETALLIC SILICON-III AND SEMICONDUCTIVE SILICON-IV AT AMBIENT PRESSURE [J].
BESSON, JM ;
MOKHTARI, EH ;
GONZALEZ, J ;
WEILL, G .
PHYSICAL REVIEW LETTERS, 1987, 59 (04) :473-476
[7]   INTERATOMIC POTENTIALS FOR SILICON STRUCTURAL ENERGIES [J].
BISWAS, R ;
HAMANN, DR .
PHYSICAL REVIEW LETTERS, 1985, 55 (19) :2001-2004
[8]   NEW CLASSICAL-MODELS FOR SILICON STRUCTURAL ENERGIES [J].
BISWAS, R ;
HAMANN, DR .
PHYSICAL REVIEW B, 1987, 36 (12) :6434-6445
[9]  
Born M., 1956, DYNAMICAL THEORY CRY
[10]  
BRENNER DW, 1985, PHYS REV B, V34, P1304