USE OF HEAVY DOPING EFFECTS TO CALCULATE ELECTROSTATIC-FIELD ACTING ON IMPURITY ATOMS

被引：4

作者：

JAIN, RK

机构：

来源：

关键词：

D O I：

10.1063/1.324606

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：946 / 948

页数：3

共 9 条

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[4]

JAIN RK, UNPUBLISHED

[5]

JAIN RK, 1976, THESIS KATHOLIEKE U

[6] ON AMBIPOLAR DIFFUSION OF IMPURITIES INTO SILICON [J].

KENNEDY, DP .

SHOCKLEY, W .

THAI, ND .

[9] TRANSPORT EQUATIONS IN HEAVY DOPED SILICON [J].

VANOVERSTRAETEN, RJ ;

DEMAN, HJ ;

MERTENS, RP .