STRAIN-INDUCED ENERGY SHIFT OF PHOTOLUMINESCENCE SPECTRA IN MOCVD-GROWN ZNTE FILMS ON (100) GAAS SUBSTRATES

被引：30

作者：

EKAWA, M ^{[1
]}

TAGUCHI, T ^{[1
]}

机构：

[1] OSAKA UNIV, FAC ENGN, DEPT ELECTR ENGN, SUITA, OSAKA 565, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 08期

关键词：

D O I：

10.1143/JJAP.28.L1341

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1341 / L1344

页数：4

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