GAINAS/GAAS MULTIPLE QUANTUM WELL REFLECTION MODULATORS

[1] BORN M, 1975, PRINCIPLES OPTICS, P66

[2] MULTIPLE QUANTUM-WELL REFLECTION MODULATOR [J]. APPLIED PHYSICS LETTERS, 1987, 50 (17) : 1119 - 1121

[3] GAINAS/GAAS STRAINED LAYER MQW ELECTROABSORPTION OPTICAL MODULATOR AND SELF-ELECTRO-OPTIC EFFECT DEVICE [J]. ELECTRONICS LETTERS, 1988, 24 (05) : 295 - 297

[4] DOBBELAERE W, 1988, IN PRESS APPL PH JUL

[5] ELECTRIC-FIELD DEPENDENCE OF OPTICAL-ABSORPTION NEAR THE BAND-GAP OF QUANTUM-WELL STRUCTURES [J]. PHYSICAL REVIEW B, 1985, 32 (02) : 1043 - 1060

[6] Pankove JI, 1975, OPTICAL PROCESSES SE, P93

[7] HIGH REFLECTIVITY GAAS-ALGAAS MIRRORS FABRICATED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1028 - 1030

[8] INTERFERENCE FILTERS - SINGLE-CRYSTAL MULTILAYER ALAS-GAAS [J]. APPLIED OPTICS, 1976, 15 (05): : 1256 - 1257

[9] MULTILAYER GAAS-AL0.3GA0.7AS DIELECTRIC QUARTER WAVE STACKS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED OPTICS, 1975, 14 (11): : 2627 - 2630

[1] BORN M, 1975, PRINCIPLES OPTICS, P66

[2] MULTIPLE QUANTUM-WELL REFLECTION MODULATOR [J]. APPLIED PHYSICS LETTERS, 1987, 50 (17) : 1119 - 1121

[3] GAINAS/GAAS STRAINED LAYER MQW ELECTROABSORPTION OPTICAL MODULATOR AND SELF-ELECTRO-OPTIC EFFECT DEVICE [J]. ELECTRONICS LETTERS, 1988, 24 (05) : 295 - 297

[4] DOBBELAERE W, 1988, IN PRESS APPL PH JUL

[5] ELECTRIC-FIELD DEPENDENCE OF OPTICAL-ABSORPTION NEAR THE BAND-GAP OF QUANTUM-WELL STRUCTURES [J]. PHYSICAL REVIEW B, 1985, 32 (02) : 1043 - 1060

[6] Pankove JI, 1975, OPTICAL PROCESSES SE, P93

[7] HIGH REFLECTIVITY GAAS-ALGAAS MIRRORS FABRICATED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1028 - 1030

[8] INTERFERENCE FILTERS - SINGLE-CRYSTAL MULTILAYER ALAS-GAAS [J]. APPLIED OPTICS, 1976, 15 (05): : 1256 - 1257

[9] MULTILAYER GAAS-AL0.3GA0.7AS DIELECTRIC QUARTER WAVE STACKS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED OPTICS, 1975, 14 (11): : 2627 - 2630