FABRICATION AND CHARACTERIZATION OF SI-COUPLED SUPERCONDUCTING FIELD-EFFECT TRANSISTORS WITH 0.1 MU-M GATE

被引：12

作者：

HATANO, M

MURAI, F

NISHINO, T

HASEGAWA, H

KURE, T

KAWABE, U

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期

关键词：

D O I：

10.1116/1.584534

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1333 / 1337

页数：5

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