AZIDE-PHENOLIC RESIN PHOTORESISTS FOR DEEP UV LITHOGRAPHY

被引：90

作者：

IWAYANAGI, T

KOHASHI, T

NONOGAKI, S

MATSUZAWA, T

DOUTA, K

YANAZAWA, H

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1981.20605

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1306 / 1310

页数：5

共 18 条

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[2] PERFORMANCE LIMITS IN 1-1 UV PROJECTION LITHOGRAPHY
BRUNING, JH
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[3] MICROLITHOGRAPHY - KEY TO SOLID-STATE DEVICE FABRICATION
DECKERT, CA
ROSS, DL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C45 - C56
[4] CHLOROMETHYLATED POLYSTYRENE AS A DRY ETCHING-RESISTANT NEGATIVE RESIST FOR SUB-MICRON TECHNOLOGY
IMAMURA, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) : 1628 - 1630
[5] AZIDE PHOTORESISTS FOR DEEP UV LITHOGRAPHY
IWAYANAGI, T
KOHASHI, T
NONOGAKI, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) : 2759 - 2760
[6] KOHASHI T, 1979, PHOTOGR SCI ENG, V23, P168
[7] KOSAR J, 1965, LIGHT SENSITIVE SYST, P359
[8] DEEP UV LITHOGRAPHY
LIN, BJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1317 - 1320
[9] DEEP UV 1-1 PROJECTION LITHOGRAPHY UTILIZING NEGATIVE RESIST MRS
MATSUZAWA, T
TOMIOKA, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) : 1284 - 1288
[10] MATSUZAWA T, 1981, ELECTRON DEVIC LETT, V2, P90, DOI 10.1109/EDL.1981.25352