AN EXPERIMENTAL-DETERMINATION OF ELECTRON-DRIFT VELOCITY IN 0.5-MU-M GATE-LENGTH ION-IMPLANTED GAAS-MESFETS

被引：4

作者：

FENG, M

LAU, CL

EU, V

机构：

[1] Ford Microelectronics Inc., Colorado Springs

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 02期

关键词：

D O I：

10.1109/55.75697

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A microwave technique was used to determine the electron drift velocity in an ion-implanted GaAs MESFET with a 0.5 x 100-mu-m gate. The characteristics of the velocity versus drain-to-source voltage for a GaAs MESFET exhibit a peak velocity of 4.0, 3.3, and 2.2 x 10(7) cm/s at 100%, 65%, and 31% of I(dss), respectively. This work presents the first experimental result of electron drift velocity at various gate biases and provides verification for velocity overshoot in ion-implanted GaAs MESFET's.

引用

页码：40 / 41

页数：2