ANALYSIS OF SI/SI(X)GE(1-X)/SI MICROSTRUCTURES BY SPECTROSCOPIC ELLIPSOMETRY

被引：5

作者：

HULSE, JE

HELLER, LM

ROLFE, SJ

机构：

[1] Institute for Microstructural Sciences, National Research Council of Canada, Ottawa

来源：

THIN SOLID FILMS | 1994年 / 248卷 / 02期

关键词：

D O I：

10.1016/0040-6090(94)90002-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spectroscopic ellipsometry is used to examine the microstructure of two buried SixGe1-x alloy films grown by molecular beam epitaxy. In each case the optical measurements show these heterostructure materials to differ significantly in composition and thickness from those which were intended. These discrepancies indicate that there is substantial mixing of species across interfaces. Spectroscopic ellipsometry, which in principle could be performed in situ to monitor the growth of such materials, is shown to provide a quick diagnostic of this intermixing.

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页码：140 / 144

页数：5

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