LOW-TEMPERATURE EPITAXIAL-GROWTH OF INSITU DOPED SILICON FILMS

被引：7

作者：

KIRCHER, R ^{[1
]}

FURUNO, M ^{[1
]}

MUROTA, J ^{[1
]}

ONO, S ^{[1
]}

机构：

[1] TOHOKU UNIV,ELECT COMMUN RES INST,MICROELECTR LAB,SUPERCLEAN ROOM,SENDAI,MIYAGI 980,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 115卷 / 1-4期

关键词：

Doping Concentration;

D O I：

10.1016/0022-0248(91)90782-Z

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The dependence of the epitaxial growth of in-situ doped silicon films on the B2H6 and PH3 partial pressure deposited by low pressure chemical vapor deposition (LPCVD) in the temperature range between 600 and 750-degrees-C has been investigated for the two substrate orientations (100) and (111). The influence of the partial pressure of the dopant gases on the deposition rate and the resulting doping concentration has been studied. It is found that the doping concentration can be controlled in a wide range of 10(16) to 10(20) cm-3. In the presence of B2H6 as well as PH3 the growth rate of silicon is reduced.

引用

页码：439 / 442

页数：4

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