RESONANT TUNNELING IN SUBMICRON DOUBLE-BARRIER HETEROSTRUCTURES

被引：74

作者：

SU, B ^{[1
]}

GOLDMAN, VJ ^{[1
]}

SANTOS, M ^{[1
]}

SHAYEGAN, M ^{[1
]}

机构：

[1] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 07期

关键词：

D O I：

10.1063/1.104535

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated submicron resonant tunneling devices from double-barrier AlGaAs/GaAs heterostructures using electron beam lithography and wet chemical etching. These devices exhibit step-like features in the current-voltage curves. We interpret these steps as arising from additional size quantization of the electronic states in the well due to in-plane lithographic confinement. Magnetotunneling experiments on these devices are reported for the first time. A simple model calculation describes well the experimental data.

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页码：747 / 749

页数：3

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共 9 条

[1] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].

CHANG, LL ;

ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

[2] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES [J].

GOLDMAN, VJ ;

TSUI, DC ;

CUNNINGHAM, JE .

PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1256-1259

[3] OPTICAL SPECTROSCOPY OF ULTRASMALL STRUCTURES ETCHED FROM QUANTUM-WELLS [J].

KASH, K ;

SCHERER, A ;

WORLOCK, JM ;

CRAIGHEAD, HG ;

TAMARGO, MC .

APPLIED PHYSICS LETTERS, 1986, 49 (16) :1043-1045

[4] ANHARMONIC-OSCILLATOR MODEL OF A QUANTUM DOT NANOSTRUCTURE [J].

LUBAN, M ;

LUSCOMBE, JH ;

REED, MA ;

PURSEY, DL .

APPLIED PHYSICS LETTERS, 1989, 54 (20) :1997-1999

[5] FREQUENCY LIMIT OF DOUBLE-BARRIER RESONANT-TUNNELING OSCILLATORS [J].

LURYI, S .

APPLIED PHYSICS LETTERS, 1985, 47 (05) :490-492

[6] OBSERVATION OF DISCRETE ELECTRONIC STATES IN A ZERO-DIMENSIONAL SEMICONDUCTOR NANOSTRUCTURE [J].

REED, MA ;

RANDALL, JN ;

AGGARWAL, RJ ;

MATYI, RJ ;

MOORE, TM ;

WETSEL, AE .

PHYSICAL REVIEW LETTERS, 1988, 60 (06) :535-537

[7] ELECTRONIC SPECTROSCOPY OF ZERO-DIMENSIONAL SYSTEMS [J].

SMITH, TP ;

LEE, KY ;

KNOEDLER, CM ;

HONG, JM ;

KERN, DP .

PHYSICAL REVIEW B, 1988, 38 (03) :2172-2175

[8] RESONANT TUNNELING THROUGH ONE-DIMENSIONAL AND ZERO-DIMENSIONAL STATES CONSTRICTED BY ALXGA1-XAS/GAAS/ALXGA1-XAS HETEROJUNCTIONS AND HIGH-RESISTANCE REGIONS INDUCED BY FOCUSED GA ION-BEAM IMPLANTATION [J].

TARUCHA, S ;

HIRAYAMA, Y ;

SAKU, T ;

KIMURA, T .

PHYSICAL REVIEW B, 1990, 41 (08) :5459-5462

[9] RESONANT TUNNELING AND INTRINSIC BISTABILITY IN ASYMMETRIC DOUBLE-BARRIER HETEROSTRUCTURES [J].

ZASLAVSKY, A ;

GOLDMAN, VJ ;

TSUI, DC ;

CUNNINGHAM, JE .

APPLIED PHYSICS LETTERS, 1988, 53 (15) :1408-1410